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NP60N04HLF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04HLF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04ILF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04ILF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04KUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04MUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04MUK

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04MUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04MUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=4.3m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04NUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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31518
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8866
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12277
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NEC
6000
面議
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更多NP60N04供應(yīng)商 更新時(shí)間2025-1-23 14:00:00

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