| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號：
NP8
- 制造商：
Renesas Electronics Corporation
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Renesas |
21+ |
- |
50 |
全新原裝鄙視假貨 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
NA |
33000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
RENESAS/瑞薩 |
TO-263 |
22+ |
56000 |
全新原裝進(jìn)口,假一罰十 |
詢價 | ||
NEC |
24+ |
TO-263 |
8866 |
詢價 | |||
NEC |
23+ |
TO-263 |
11837 |
全新原裝 |
詢價 | ||
NEC |
6000 |
面議 |
19 |
TO-263 |
詢價 | ||
AVAGO/安華高 |
23+ |
SOP-8 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價 | ||
VBsemi |
23+ |
TO263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VB |
21+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
R |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 |
相關(guān)規(guī)格書
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