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PTPS7H2201DAPTSEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

PTPS7H2201DAPTSEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

PTPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

PTPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

PTS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

PTS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2201

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2201EVM-CVAL

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201EVM-CVAL

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201EVM-CVAL

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201MDAPTSEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201-SEP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

供應(yīng)商型號品牌批號封裝庫存備注價格
TI
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
TI
23+
5000
全新原裝正品現(xiàn)貨
 詢價
TI
22+
CFP (HFT)
6000
原廠原裝,價格優(yōu)勢!13246658303
 詢價
TI
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TI
21+
QFN
13880
公司只售原裝,支持實(shí)單
 詢價
TI/德州儀器
23+
QFN
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
TI
1106+
QFN
1396
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
TI/德州儀器
23+
QFN
1396
只供應(yīng)原裝正品 歡迎詢價
 詢價
TI
22
QFN
39890
3月31原裝,微信報價
 詢價
TI
23+
QFN
5000
全新原裝,支持實(shí)單,非誠勿擾
 詢價
更多PTPS7H2201DAPTSEP供應(yīng)商 更新時間2024-12-26 15:00:00

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