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RF1S640SM中文資料ARTSCHIP數(shù)據(jù)手冊(cè)PDF規(guī)格書

RF1S640SM
廠商型號(hào)

RF1S640SM

功能描述

N-Channel Power Mosfets

文件大小

453.84 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 ARTSCHIP ELECTRONICS CO.,LMITED.
企業(yè)簡(jiǎn)稱

ARTSCHIP

中文名稱

ARTSCHIP ELECTRONICS CO.,LMITED.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-5-20 10:03:00

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RF1S640SM規(guī)格書詳情

18A, 200V, 0.180 Ohm, N-Channel Power Mosfets

These are N-Channel enhansement mode silicon gate power field effect transistors. They are advance power MOSFETs designed, tested, and guaranteed to withstancd a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17422.

Features

● 18A, 200V

● rDS(ON)=0.180 ?

● Single Pulse Avalanche Energy Rated

● SOA is Power Dissipation Limited

● Nanosecond Switching Speed

● Linear Transfer Characteristics

● High Input Impedance

● Related Literature

-TB334 “Guidelines for Soldering Surface Mount Components

PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RF1S640SM

  • 功能描述:

    MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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