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SCT

Humidity and Temperature Wall Mount Transducers

Features ?Enhancedaccuracy: -±4%RH(10%RHto90%RHat25°C), ±5%RH(10%RHto90%RHat5°Cto50°C) -Enablesthecustomertopotentiallyreduce/eliminate transmitterrecalibrationcostandsupportsandoptimizes systemaccuracyanduptime ?Long-termstab

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

SCT011H75G3AG

Marking:011H75G3AG;Package:H2PAK-7;Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT011HU75G3AG

Marking:SCT01175G3AG;Package:HU3PAK;Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT012H90G3AG

Marking:12H90G3AG;Package:H2PAK-7;Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT015W120G3-4AG

Marking:015W120G34AG;Package:HiP247-4;Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features ?AEC-Q101qualified ?Veryfastandrobustintrinsicbodydiode ?Extremelylowgatechargeandinputcapacitance ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT016H120G3AG

Marking:16H120G3AG;Package:HPAK-7;Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?DC/DCconverterforEV/HEV ?Maininverter(electrictraction)

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT018H65G3AG

Marking:18H65G3AG;Package:H2PAK-7;Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT018W65G3-4AG

SiC N-Channel MOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive ·HighBlockingVoltagewithLowOn-Resistance APPLICATIONS ·EVBatteryChargers ·RenewableEnergy ·HighVoltageDC/DCConverters ·SwitchModePowerSupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SCT018W65G3-4AG

Marking:18W65G34AG;Package:HiP247-4;Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT020H120G3AG

Marking:20H120G3AG;Package:H2PAK-7;Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號:

    SCT

  • 制造商:

    MAGNELAB

  • 功能描述:

    CURRENT TRANSFORMER SPLITCORE 25A

  • 功能描述:

    CURRENT TRANSFORMER, SPLITCORE, 25A

  • 功能描述:

    CURRENT TRANSFORMER, SPLITCORE, 25A; Input

  • Current:

    25A; Turns

  • Ratio:

    -; Frequency

  • Min:

    50Hz; Frequency

  • Max:

    400Hz; Transformer

  • Mounting:

    -;

  • SVHC:

    No SVHC(19-Dec-2012);

  • Accuracy:

    1%; Current Range

  • AC:

    25A; Secondary Current

  • Nom:

    25A; Sensor ;RoHS

  • Compliant:

    Yes

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更多SCT供應商 更新時間2025-4-4 8:26:00