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SCT040H65G3SAG

Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Description ThissiliconcarbidePowerMOSFETdevicehasbeendevelopedusingST

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040HU120G3AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?DC/DCconverterforEV/HEV ?Maininverter(electrictraction)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040HU65G3AG

Marking：SCT40HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040TO65G3

Marking：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 m? typ., 35 A in a TO-LL package

Features ?Veryfastandrobustintrinsicbodydiode ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepowersupply ?DC-DCconverters Description ThissiliconcarbidePo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040W120G3-4

Marking：SCT40W120G34；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

Features ?Veryfastandrobustintrinsicbodydiode ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications ?Switchingmodepowersupply ?Powersupplyforrenewableenergy

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040W120G3AG

Marking：40W120G3AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications ?Maininverter(electrictraction) ?DC/DC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040W65G3-4

Marking：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepow

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT040W65G3-4AG

Marking：SCT040W65G3；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features ?AEC-Q101qualified ?Veryfastandrobustintrinsicbodydiode ?Extremelylowgatechargeandinputcapacitance ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT055HU65G3AG

Marking：SCT55HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HU3PAK package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT055TO65G3

Marking：055TO65G3；Package：TO-LL；Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in a TO-LL package

Features ?Veryfastandrobustintrinsicbodydiode ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepowersupply ?DC-DCconverters

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    SCT

  • 制造商：

    MAGNELAB

  • 功能描述：

    CURRENT TRANSFORMER SPLITCORE 25A

  • 功能描述：

    CURRENT TRANSFORMER, SPLITCORE, 25A

  • 功能描述：

    CURRENT TRANSFORMER, SPLITCORE, 25A; Input

  • Current：

    25A; Turns

  • Ratio：

    -; Frequency

  • Min：

    50Hz; Frequency

  • Max：

    400Hz; Transformer

  • Mounting：

    -;

  • SVHC：

    No SVHC(19-Dec-2012);

  • Accuracy：

    1%; Current Range

  • AC：

    25A; Secondary Current

  • Nom：

    25A; Sensor ;RoHS

  • Compliant：

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TDK-LAMBD
24+
DIP
500
TDK-LAMBDA電源專營現(xiàn)貨原裝正品專營
 詢價(jià)
ON
17+
SOP8
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
ST
20+
TO247
11520
特價(jià)全新原裝公司現(xiàn)貨
 詢價(jià)
SIBERCOR
09+
BGA
5500
原裝無鉛,優(yōu)勢熱賣
 詢價(jià)
smal
24+
SMD
6232
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
TDK-Lambda
2022+
48
全新原裝 貨期兩周
 詢價(jià)
24+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
 詢價(jià)
SIBERCOR
2020+
BGA
2000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
SC
08+
DIP
67
普通
 詢價(jià)
ST
1449+
TO-247
18
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價(jià)
更多SCT供應(yīng)商 更新時(shí)間2025-4-6 14:32:00

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