| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SK20P06 | MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | |
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SEMIKRON |
24+ |
MODULE |
2176 |
公司大量現(xiàn)貨 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
1(天)SS/星海 |
2016+ |
DO214AA(SMB) |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品! |
詢價(jià) | ||
NEWINORIGINAL |
24+ |
1808 |
20700 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
SUNMATE(森美特) |
2019+ROHS |
SOD-123FL |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價(jià) | ||
GK |
DO-214AC |
568923 |
提供BOM表配單只做原裝貨值得信賴 |
詢價(jià) | |||
BILIN |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
DIO |
23+ |
NA |
584 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
星海中性 |
22+23+ |
SMA |
23657 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
MIC |
24+ |
SMA |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理 |
詢價(jià) | ||
MCC(美微科) |
21+ |
HSMB |
12588 |
原裝正品,價(jià)格優(yōu)勢(shì) |
詢價(jià) |
