首頁(yè) >SPB10N10 G>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPowerTransistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPowerTransistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-Channel100V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SuperhighdensecelldesignforlowRDS(ON). | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
100VN-ChannelDTMOS | WUMCWuxi Unigroup Microelectronics Company 紫光國(guó)微紫光國(guó)芯微電子股份有限公司 | WUMC | ||
10A,100VN-CHANNELMOSFET ■DESCRIPTION TheUTCUTT10N10isaN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithaminimumon-stateresistance,highswitchingspeedandultralowgatecharge.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
PowerManagementinDC/DCConverter. | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微碩半導(dǎo)體微碩半導(dǎo)體(深圳)有限公司 | WIINSOK |
詳細(xì)參數(shù)
- 型號(hào):
SPB10N10 G
- 功能描述:
MOSFET N-CH 100V 10.3A D2PAK
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
SIPMOS®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon |
24+ |
TO-263 |
7500 |
詢價(jià) | |||
Infineon |
23+ |
TO-263 |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
INF |
23+ |
SOT404 |
7000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
Infineo |
21+ |
TO-263 |
12588 |
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
Infineo |
2020+ |
TO-263 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢價(jià) | ||
INFINEON |
2023+ |
D2PAK(TO |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-263 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon |
07+ |
TO-263 |
13000 |
詢價(jià) |
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