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STB10LN80K5

Marking:10LN80K5;Package:D2PAK;N-channel 800 V, 0.55 Ω typ., 8 A MDmesh? K5 Power MOSFET in a D2PAK package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestfigureofmerit(FoM) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STMICROELECTRONICSSTMicroelectronics

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STB10N60M2

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

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STB10N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STB10N65K3

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

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STB10N95K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STB10NA40

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.46? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(

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STB10NB20

N - CHANNEL 200V - 0.30ohm - 10A - D2PAK PowerMESH] MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronishasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perar

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STB10NB50

N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

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STB10NC50-1

N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

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STB1132

Marking:A1**;Package:SOT-89;PNP Silicon Transistor

Description ?Mediumpoweramplifier Features ?PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) ?Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) ?ComplementarypairwithSTD1664

AUK

AUK corp

詳細(xì)參數(shù)

  • 型號(hào):

    STB

  • 制造商:

    Cooper Hand Tools/Weller

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STMicro.
23+
D2PAK
7750
全新原裝優(yōu)勢(shì)
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ST
23+
TO-263
8795
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ST
TO-263
256
正品原裝--自家現(xiàn)貨-實(shí)單可談
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STMicroelectronics
23+
NA
10658
專(zhuān)業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
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ST
23+
QFN-32
65480
詢(xún)價(jià)
三年內(nèi)
1983
只做原裝正品
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STMicroelectronics
24+
30-FlipChip(2.59x2.25)
66800
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源!
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AUK
23+
SOT-89
10000
全新原裝正品現(xiàn)貨
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STMicro
102
TO-263
350
原裝正品
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STMicr
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票!
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更多STB供應(yīng)商 更新時(shí)間2025-4-7 16:50:00