首頁 >STB20N65M5>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STB20N65M5 | N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
STB20N65M5 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
STB20N65M5 | N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
詳細參數
- 型號:
STB20N65M5
- 功能描述:
MOSFET N-Ch 650V 18A Mdmesh V 0.19Ohm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO263 |
6996 |
只做原裝正品現貨 |
詢價 | ||
STM |
21+ |
TO-263-3 (D2PAK) |
6000 |
原裝正品 有掛有貨 |
詢價 | ||
STM |
21+ |
6000 |
TO-263-3 (D2PAK) |
詢價 | |||
ST |
21+ |
D2PAK |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
ST(意法半導體) |
2022+原裝正品 |
TO-263-3 |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價 | ||
STM |
23+ |
TO-263-3 (D2PAK) |
12000 |
原裝現貨支持送檢 |
詢價 | ||
ST/意法 |
23+ |
D2PAK |
360000 |
專業(yè)供應MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
ST/意法 |
21+ |
TO263-3 |
2000 |
原裝正品,支持實單。 |
詢價 | ||
ST |
22+23+ |
TO263 |
74314 |
絕對原裝正品現貨,全新深圳原裝進口現貨 |
詢價 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)! |
詢價 |
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