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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STB20NM60D	文件：283.95 Kbytes Page：13 Pages	N-channel 600V - 0.26廓 - 20A - D2PAK FDmesh??Power MOSFET Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100A	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STB20NM60D	文件：313.79 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF20NM60A	文件：309.42 Kbytes Page：12 Pages	N-CHANNEL650V@Tjmax-0.25Ohm-20AI?PAK/TO-220/TO-220FP DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF20NM60D	文件：341.43 Kbytes Page：15 Pages	N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF20NM60D	文件：294.49 Kbytes Page：2 Pages	iscN-ChannelMosfetTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP20NM60	文件：318.38 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP20NM60	文件：440.68 Kbytes Page：18 Pages	N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP20NM60	文件：355.14 Kbytes Page：15 Pages	N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP20NM60A	文件：309.42 Kbytes Page：12 Pages	N-CHANNEL650V@Tjmax-0.25Ohm-20AI?PAK/TO-220/TO-220FP DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP20NM60FD	文件：341.43 Kbytes Page：15 Pages	N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP20NM60FD	文件：303.57 Kbytes Page：2 Pages	iscN-ChannelMosfetTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP20NM60FP	文件：243.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP20NM60FP	文件：440.68 Kbytes Page：18 Pages	N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP20NM60FP	文件：355.14 Kbytes Page：15 Pages	N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STW20NM60	文件：256.329 Kbytes Page：8 Pages	N-CHANNEL600V-0.26ohm-20ATO-247MDmesh??owerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STW20NM60	文件：355.14 Kbytes Page：15 Pages	N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STW20NM60	文件：440.68 Kbytes Page：18 Pages	N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STW20NM60	文件：398.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW20NM60FD	文件：324.89 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW20NM60FD	文件：341.43 Kbytes Page：15 Pages	N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號：
STB20NM60D
功能描述：
MOSFET N Ch 600V 0.26 Ohm 20A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	STB20NM60D	STMicroelectronics	24+	D2PAK	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市凌旭科技有限公司	STB20NM60D	ST	21+	TO-263	36968	十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!	詢價(jià)
深圳市冠億通科技有限公司	STB20NM60D	ST(意法)	21+		5000	只做原裝假一罰百可開票可售樣	詢價(jià)
深圳和潤天下電子科技有限公司	STB20NM60D	ST/意法半導(dǎo)體	22+	TO-263-3	6002	原裝正品現(xiàn)貨可開增值稅發(fā)票	詢價(jià)
深圳市柏芯特電子科技有限公司	STB20NM60D	ST/意法半導(dǎo)體	2023	TO-263-3	6000	公司原裝現(xiàn)貨/支持實(shí)單	詢價(jià)
深圳市高捷芯城科技有限公司	STB20NM60D	ST(意法半導(dǎo)體)	23+	D2PAK	8498	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
深圳市佳鑫美電子科技有限公司	STB20NM60D	ST/意法半導(dǎo)體	23+	TO-263-3	4650	絕對原裝公司現(xiàn)貨	詢價(jià)
柒號芯城電子商務(wù)(深圳)有限公司	STB20NM60D	ST	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市弘為電子有限公司	STB20NM60D	ST	16+	08+	1	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	STB20NM60D	ST	24+	TO-263	7500		詢價(jià)

更多STB20NM60D供應(yīng)商更新時(shí)間2024-11-8 10:12:00

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