首頁 >STB26NM60ND>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
STB26NM60ND | isc N-Channel MOSFET Transistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=21A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
STB26NM60ND | Low input capacitance and gate charge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | |
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135??20AMDmesh??IIPowerMOSFETinTO-220FP Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135,20AMDmeshIIPowerMOSFETinPAKFPpackage ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationof MDmesh?technology. ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號：
STB26NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Tape and Reel
- 功能描述：
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Cut TR(SOS)
- 功能描述：
MOSFET N-CH 600V 21A D2PAK
- 功能描述：
600V, 0.144OHM, 21A, POWERFET W/ FAST DIODE, N-CHANNEL, D2PAK
- 功能描述：
Single N-Channel 600 V 0.175 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
NEC |
23+ |
SOP-8 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
STM |
1809+ |
TO-263 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ST/意法 |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價 | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | |||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ST |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
ST |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
63880 |
本公司只售原裝 支持實單 |
詢價 |
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