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STB19NM65N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB19NM65NT4

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號:

    STB19NM65N

  • 功能描述:

    MOSFET N-Channel 650V 0.25 Ohms 15.5A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多STB19NM65N供應商 更新時間2025-1-22 15:30:00