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STP19NM65N

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STP19NM65N

  • 功能描述：

    MOSFET N-channel 650V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
23+
TO-220AB
65400
詢價(jià)
STMicroelectronics
23+
TO-220
6000
15年原裝正品企業(yè)
 詢價(jià)
ST
24+
TO-220-3
995
詢價(jià)
ST
17+
TO-220
6200
詢價(jià)
STMicro.
23+
TO-220
7750
全新原裝優(yōu)勢
 詢價(jià)
ST
24+
TO-220AB
3000
全新原裝環(huán)保現(xiàn)貨
 詢價(jià)
ST
16+
TO-220-3(直引
995
原裝現(xiàn)貨假一罰十
 詢價(jià)
ST
2020+
TO-220AB
9800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
ST全系列
22+23+
TO-220
26857
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
ST
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
更多STP19NM65N供應(yīng)商 更新時(shí)間2024-12-27 16:33:00

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