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STF4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP4N62K3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STU4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STU4N62K3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STU4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應商型號品牌批號封裝庫存備注價格
ST
22+
NA
10000
原裝正品支持實單
 詢價
ST
23+
TO-251PBF
16900
正規(guī)渠道,只有原裝!
 詢價
ST
22+
TO-251PBF
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
ST/意法
21+
TO252
5000
優(yōu)勢供應 實單必成 可開增值稅13點
 詢價
ST/意法
23+
TO252
5000
原裝正品實單必成
 詢價
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ST/意法
22+
TO-252
34137
只做原裝進口現(xiàn)貨
 詢價
ST/意法
13+
TO-252
139
詢價
更多STD4N62K3(EM)供應商 更新時間2025-1-18 10:50:00

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