首頁 >STGD10NC60H>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STGD10NC60H | N-channel 10A - 600V - DPAK Very fast PowerMESH??IGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
600 V - 10 A - very fast IGBT Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
600 V - 10 A - very fast IGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
包裝:卷帶(TR) 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 20A 62W D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
包裝:管件 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 20A 60W DPAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-10A-D2PAK/TO-220/DPAKShortcircuitratedPowerMESHTMIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-10A-DPAKShortcircuitratedPowerMESHTMIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600Vshort-circuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600VfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600VfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
600V-10A-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-10A-TO-220-D2PAK-TO-220FPveryfastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
600V-10A-veryfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600Vshort-circuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHTMIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHIGBT Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600Vshort-circuitruggedIGBT Description ThesedevicesareveryfastIGBTsdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ?Lowe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
10A,600VfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL10A-600V-TO-220VERYFASTPowerMESH??IGBT Generalfeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■LOWERCRES/CIESRATIO(NO CROSS-CONDUCTIONSUSCEPTIBILITY) ■VERYSOFTULTRAFASTRECOVERY ANTIPARALLELDIODE Description Usingthelatesthighvoltagetechnologybasedon apatentedstriplayout,STMicroelectronicshas designedana | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel10A-600V-TO-220VeryfastPowerMESHTMIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號:
STGD10NC60H
- 制造商:
STMicroelectronics
- 功能描述:
Transistor IGBT N-Ch 600V 20A DPAK
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO252DPAK |
8866 |
詢價 | |||
ST |
1926+ |
DPAK |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
ST |
24+ |
TO-252 |
65300 |
一級代理/放心購買! |
詢價 | ||
STM原廠目錄 |
24+ |
DPAK |
28500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
ST/意法 |
23+ |
TO252DPAK |
10000 |
公司只做原裝正品 |
詢價 | ||
ST |
22+ |
TO252DPAK |
6000 |
十年配單,只做原裝 |
詢價 | ||
ST/意法 |
22+ |
TO-252 |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價 | ||
ST |
15+ |
DPAK |
500 |
進口原裝現(xiàn)貨假一賠萬力挺實單 |
詢價 | ||
ST |
TO-252 |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+ |
TO252DPAK |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 |
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