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STGF10NC60SD

10A,600VfastIGBT

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60H

N-CHANNEL10A-600V-TO-220VERYFASTPowerMESH??IGBT

Generalfeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■LOWERCRES/CIESRATIO(NO CROSS-CONDUCTIONSUSCEPTIBILITY) ■VERYSOFTULTRAFASTRECOVERY ANTIPARALLELDIODE Description Usingthelatesthighvoltagetechnologybasedon apatentedstriplayout,STMicroelectronicshas designedana

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60H

N-channel10A-600V-TO-220VeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60H

N-channel10A-600V-TO-220VeryfastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60HD

600V-10A-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60HD

N-channel600V-10A-TO-220-D2PAK-TO-220FPveryfastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60HD

N-channel600V-10A-TO-220-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60HD

600V-10A-veryfastIGBT

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60K

N-channel600V-10A-D2PAK/TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60KD

10A,600Vshort-circuitruggedIGBT

Description ThesedevicesareveryfastIGBTsdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ?Lowe

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60KD

N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60KD

N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHIGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit

STMICROELECTRONICSSTMicroelectronics

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STGP10NC60KD

10A,600Vshort-circuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NC60S

10A,600VfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STH10NC60

N-CHANNEL600V-0.6ohm-10A-TO-247/ISOWATT218PowerMesh??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

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STH10NC60FI

N-CHANNEL600V-0.6ohm-10A-TO-247/ISOWATT218PowerMesh??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

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STH10NC60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW10NC60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW10NC60

N-CHANNEL600V-0.6ohm-10A-TO-247/ISOWATT218PowerMesh??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TSM10NC60CF

Advancedplanarprocess

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
原廠原封
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST
1932+
TO-220F
335
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
22
TO-220F
25000
3月31原裝,微信報價
 詢價
ST
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
ST
22+
TO-220F
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
ST
23+
TO-220F
25000
原廠/代理渠道 價格優(yōu)勢
 詢價
ST
20+
TO-220F
25000
全新原裝現(xiàn)貨 假一賠十
 詢價
ST/意法
2022+
5000
只做原裝,價格優(yōu)惠,長期供貨。
 詢價
STMicro.
23+
TO-220FP
7750
全新原裝優(yōu)勢
 詢價
更多STGF10NC60KD/SADA供應(yīng)商 更新時間2025-1-11 17:07:00

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