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STGP5H60DF

Marking:GP5H60DF;Package:TO-220;Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGP5H60DF

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：TRENCH GATE FIELD-STOP IGBT, H S

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

GUR5H60

UltrafastRectifier

VishayVishay Siliconix

威世科技威世科技半導體

GUR5H60

UltrafastRectifiers

VishayVishay Siliconix

威世科技威世科技半導體

GURB5H60

UltrafastRecoveryDiode

FEATURES ·UltrafastRecoveryTime ·LowRorwardRoltage,HighEfficiency ·LowLeakage ·IdealForDiodeModulationAndSecondary DC/DCOutputRectification APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

GURB5H60

UltrafastRectifier

VishayVishay Siliconix

威世科技威世科技半導體

GURB5H60

UltrafastRectifiers

VishayVishay Siliconix

威世科技威世科技半導體

GURF5H60

UltrafastRectifiers

VishayVishay Siliconix

威世科技威世科技半導體

GURF5H60

UltrafastRectifier

VishayVishay Siliconix

威世科技威世科技半導體

MAN5H60

13mm(0.512inch)OneDigitNUMERICFRAMEDISPLAY

FEATURES ?BrightBoldSegments ?CommonAnode/Cathode ?LowPowerConsumption ?LowCurrentCapability ?NeutralSegments ?GreyFace ?EpoxyEncapsulatedFrame ?HighPerformance ?HighReliability APPLICATIONS ?Appliances ?Automotive ?Instrumentation ?ProcessControl

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MBR5H60AFC

SurfaceMountUltraLowIRSchottkyBarrierRectifier

Features ?Lowleakagecurrent ?Idealforautomatedplacement ?Lowpowerloss,highefficiency ?Highsurgecurrentcapability ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂股份有限公司

MBR5H60AFC-AU

SurfaceMountUltraLowIRSchottkyBarrierRectifier

Features ?Lowleakagecurrent ?Idealforautomatedplacement ?Lowpowerloss,highefficiency ?Highsurgecurrentcapability ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂股份有限公司

MBR5H60PC-AU

SurfaceMountUltraLowIRSchottkyBarrierRectifier

Features Lowleakagecurrent Dealforautomatedplacement Lowpowerloss,highefficiency Highsurgecurrentcapability AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂股份有限公司

STGB5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGD5H60DF

TrenchField-stopIGBT

DESCRIPTION ·Highruggedness,temperaturestablebehavior ·VerylowVCEsat ·Verytightparameterdistribution ·Tightparameterdistribution APPLICATIONS ·Inductioncooker ·Microwaveovens

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STGD5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGF5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGP5H60DF

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    溝槽型場截止

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    1.95V @ 15V，5A

  • 開關能量：

    56μJ（開），78.5μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    30ns/140ns

  • 測試條件：

    400V，5A，47 歐姆，15V

  • 工作溫度：

    -55°C ~ 175°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應商器件封裝：

    TO-220

  • 描述：

    TRENCH GATE FIELD-STOP IGBT, H S

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ST
23+
TO-220
12500
ST系列在售,可接長單
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
ST
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢價
22+
NA
1262
加我QQ或微信咨詢更多詳細信息,
 詢價
ST/意法
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法半導體
2023+
TO-220-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
ST/意法半導體
21+
TO-220-3
12820
公司只做原裝,誠信經(jīng)營
 詢價
更多STGP5H60DF供應商 更新時間2025-1-13 20:17:00

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