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STGW20NC60V

Marking：GW20NC60V；Package：TO-247；30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGW20NC60V

N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGW20NC60V

30 A - 600 V - very fast IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGW20NC60V

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 60A 200W TO247

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGW20NC60VD

Marking：GW20NC60VD；Package：TO-247；N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGW20NC60VD

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 60A 200W TO247

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GB20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GP20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GW20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GW20NC60VD

N-CHANNEL30A-600VTO-247VeryFastPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGW20NC60V

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列：

    PowerMESH?

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.5V @ 15V，20A

  • 開關(guān)能量：

    220μJ（開），330μJ（關(guān)）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關(guān)）值：

    31ns/100ns

  • 測試條件：

    390V，20A，3.3 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247-3

  • 描述：

    IGBT 600V 60A 200W TO247

供應(yīng)商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ST/意法半導(dǎo)體
22+
TO-247-3
6001
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST(意法)
2450
原廠原包
99996
ST原廠原裝正品一手貨源可全線定貨
 詢價
ST
23+
TO247
7750
全新原裝優(yōu)勢
 詢價
ST
23+
TO-247
8795
詢價
ST
24+
TO-247-3
734
詢價
ST
10+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
STMICROELEC
24+
7860
原裝現(xiàn)貨假一罰十
 詢價
ST
17+
TO247
9888
只做原裝,現(xiàn)貨庫存
 詢價
ST全系列
22+23+
TO-247
26000
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多STGW20NC60V供應(yīng)商 更新時間2025-2-24 17:34:00

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