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STP28N60M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh? M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF28N60M2

N-channel600V,0.135typ.,22AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAKFPpackages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI28N60M2

N-channel600V,0.135typ.,22AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAKFPpackages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL28N60M2

N-channel600V,0.140typ.,19AMDmeshTMM2PowerMOSFETinaPowerFLATTM8x8HVpackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedevi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STP28N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 600 V, 0.120 OHM TYP., 24 A MDMESH II PLUS(TM) LOW - Rail/Tube

  • 功能描述：

    MOSFET N-CH 600V 24A TO-220

  • 功能描述：

    Single N-Channel 650 V 0.15 Ohm 190 W Through Hole Power Mosfet - TO-220-3

  • 功能描述：

    N-channel 600 V, 0.120 Ohm typ., 24 A, TO-220

  • 功能描述：

    N-channel 600 V, 0.120 Ohm typ., 24 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
STMICRO
2405+
原廠(chǎng)封裝
8900
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐
 詢(xún)價(jià)
ST/意法
21+
TO-220
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢(xún)價(jià)
STMicroelectronics Asia Pacifi
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
ST/意法半導(dǎo)體
22+
TO-220-3
6002
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢(xún)價(jià)
ST(意法半導(dǎo)體)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
ST
22+23+
TO-220
28524
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
ST
2021+
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
ST
21+
TO-220
32124
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
更多STP28N60M2供應(yīng)商 更新時(shí)間2025-1-11 17:34:00

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