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STP55NE06L

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP55NE06LFP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P55NE06

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB55NE06

N-CHANNELENHANCEMENTMODE??SINGLEFEATURESIZE??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB55NE06L

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkablema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP55NE06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP55NE06

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP55NE06FP

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP55NE06FP

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STP55NE06L

  • 功能描述：

    MOSFET TO-220 N-CH 60V 55A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
N/A
3250
詢價(jià)
ST
24+
TO-220
4000
原裝現(xiàn)貨熱賣(mài)
 詢價(jià)
ST
9801
TO-220
100
特價(jià)銷(xiāo)售歡迎來(lái)電!!
 詢價(jià)
ST
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ST
TO-220
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST/意法
23+
NA/
3304
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
ST/意法
22+
TO-220
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價(jià)
更多STP55NE06L供應(yīng)商 更新時(shí)間2025-1-22 16:00:00

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