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SVSP11N65D

11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP11N65DD2TR

Marking：P11N65D；Package：TO-252-2L；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

CEB11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FCPF11N65

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF11N65-G

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HMS11N65

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
士蘭微
22+
N/A
10000
原裝正品,渠道現(xiàn)貨
 詢價(jià)
杭州士蘭
兩年內(nèi)
NA
6380
實(shí)單價(jià)格可談
 詢價(jià)
SILAN/士蘭微
24+
TO220F
15000
只做全新原裝正品現(xiàn)貨 假一罰十
 詢價(jià)
BGA
40
詢價(jià)
24+
N/A
58000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
SILAN(士蘭微)
23+
TO-220FJD-3L
431
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)
 詢價(jià)
SILAN/士蘭微
2024+
TO-247-3L
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
Silan
23+
TO-247
2795
現(xiàn)貨庫(kù)存,實(shí)單請(qǐng)給接受價(jià)格
 詢價(jià)
Silan
23+
TO-247
20000
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展
 詢價(jià)
SAMSUNG
16+
QFP
1052
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
更多SVSP11N65D供應(yīng)商 更新時(shí)間2025-1-24 9:00:00

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