零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
3MTMSingleCoatedMedicalPlasticTape | 3M 3M Electronics | 3M | ||
Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket | BELDENBelden Inc. 百通電纜設(shè)計科技有限公司 | BELDEN | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
Cat5eUTPPatchCable | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW組件有限公司 | ASSMANN | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■30V,3.7A,RDS(ON)=80m?@VGS=10V. RDS(ON)=110m?@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100m?@VGS=-10V. RDS(ON)=150m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ULTRALOWONRESISTANCE | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
T9952
- 制造商:
Nortools International Ltd
- 功能描述:
3 PCE SET 3-30MM X 1MM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Apex |
1824+ |
NA |
16 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
NEC |
24+ |
QFP44 |
1 |
自己現(xiàn)貨 |
詢價 | ||
CYBERBLADE |
20+ |
BGA |
35830 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
CYBERBLA |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CYBERBLA |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
CYBERBLA |
23+ |
NA/ |
3280 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
YAMAHA |
2339+ |
QFP |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
YAMAHA |
2023+ |
QFP |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
YAMAHA |
21+ |
QFP |
35200 |
一級代理/放心采購 |
詢價 | ||
2023+ |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- T-997
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