首頁>TP65H300G4LSG>規(guī)格書詳情
TP65H300G4LSG中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書
TP65H300G4LSG規(guī)格書詳情
Description
The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Features
? JEDEC-qualified GaN technology
? Dynamic RDS(on) production tested
? Robust design, defined by
— Intrinsic lifetime tests
— Wide gate safety margin
— Transient over-voltage capability
? Enhanced inrush current capability
? Very low QRR
? Reduced crossover loss
Applications
? Consumer
? Power adapters
? Low power SMPS
? Lighting
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TRANSPHORM |
23+ |
NA/ |
3300 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
Transphorm |
24+ |
3-PQFN(8x8) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
HARRIS |
1998 |
SOP |
472 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
TOPRO |
24+ |
393625 |
電源IC原裝正品有優(yōu)勢 |
詢價 | |||
TOPRO |
1822+ |
QFP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
TOPRO |
24+ |
QFP |
2789 |
全新原裝自家現(xiàn)貨!價格優(yōu)勢! |
詢價 | ||
HARRIS |
23+ |
SOP |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
TOPRO |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
MOT |
24+ |
DIP |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
TOPRO |
22+ |
QFP |
5000 |
原裝現(xiàn)貨庫存.價格優(yōu)勢 |
詢價 |
