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TP65H300G4LSG中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書

TP65H300G4LSG
廠商型號

TP65H300G4LSG

功能描述

650V SuperGaN? FET in PQFN (source tab)

文件大小

1.09592 Mbytes

頁面數(shù)量

12

生產(chǎn)廠商 Transphorm
企業(yè)簡稱

TRANSPHORM

中文名稱

Transphorm官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-17 8:22:00

TP65H300G4LSG規(guī)格書詳情

Description

The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

? JEDEC-qualified GaN technology

? Dynamic RDS(on) production tested

? Robust design, defined by

— Intrinsic lifetime tests

— Wide gate safety margin

— Transient over-voltage capability

? Enhanced inrush current capability

? Very low QRR

? Reduced crossover loss

Applications

? Consumer

? Power adapters

? Low power SMPS

? Lighting

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只做原裝正品假一賠十為客戶做到零風(fēng)險!!
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