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TP65H300G4LSGB-TR中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書
TP65H300G4LSGB-TR規(guī)格書詳情
Description
The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Features
? Gen IV technology
? JEDEC-qualified GaN technology
? Dynamic RDS(on)eff production tested
? Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
? Very low QRR
? Reduced crossover loss
? RoHS compliant and Halogen-free packaging
Applications
? Consumer
? Power adapters
? Low power SMPS
? Lighting
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TP |
23+ |
NA/ |
3295 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
Transphorm |
23+ |
PQFN3(5x6) |
6000 |
誠信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
HARRIS |
23+ |
SOP |
4500 |
全新原裝、誠信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
詢價(jià) | ||
TOPRO |
22+ |
QFP |
5000 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
HARRIS |
24+ |
SOP |
2500 |
自己現(xiàn)貨 |
詢價(jià) | ||
TPPRO |
23+ |
QFP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
TOPRO |
16+ |
QFP |
1052 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
HARRIS |
1998 |
SOP |
472 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
MOT |
24+ |
DIP |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
TOPRP |
2020+ |
O-NEWQ |
20 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) |
