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AO6601

NPChannelMOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

AO6601

NPChannelMOSFET

GeneralDescription TheAO6601usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsformahigh-speedpower inverter,suitableforamultitudeofapplications. Features N-Ch: VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

AO6601-HF

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

ANADIGICS

ANADIGICS, Inc

AX6601

300mALowDropout(LDO)LinearRegulator

?GENERALDESCRIPTION TheAX6601isa300mA,fixedoutputvoltage,lowdropoutlinearregulator.TheDeviceincludespasselement,erroramplifier,band-gap,current-limit,andthermalshutdowncircuitry.Thecharacteristicsoflowdropoutvoltageandlessquiescentcurrentmakeitgoodforsome

AXELITEAXElite technology co. ltd

亞瑟萊特亞瑟萊特科技股份有限公司

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6601

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    TS6601HK

  • 功能描述：

    Tact Switch Series(6x6mm)

供應商型號品牌批號封裝庫存備注價格
SHOU HAN(首韓)
23+
彎插-4P,7.3x6.1mm
1000
原裝現(xiàn)貨/專做開關15年
 詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
SHOU HAN
24+
con
12
現(xiàn)貨常備產品原裝可到京北通宇商城查價格
 詢價
更多TS6601HK供應商 更新時間2025-4-27 10:20:00

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