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CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6601

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEU6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    TS6601HK

  • 功能描述：

    Tact Switch Series(6x6mm)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SHOU HAN(首韓)
23+
彎插-4P,7.3x6.1mm
1000
原裝現(xiàn)貨/專做開關(guān)15年
 詢價(jià)
24+
N/A
56000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
SHOU HAN
24+
con
12
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
 詢價(jià)
更多TS6601HK供應(yīng)商 更新時(shí)間2025-4-27 10:20:00

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