首頁(yè) >VNS1NV04-E>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VNS1NV04-E | 包裝:管件 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動(dòng)器 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
forcarbodyapplications Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
VNS1NV04-E
- 制造商:
STMicroelectronics
- 類別:
集成電路(IC) > 配電開關(guān),負(fù)載驅(qū)動(dòng)器
- 系列:
OMNIFET II?, VIPower?
- 包裝:
管件
- 開關(guān)類型:
通用
- 輸出數(shù):
1
- 比率 - 輸入:
1:1
- 輸出配置:
低端
- 輸出類型:
N 通道
- 接口:
開/關(guān)
- 電壓 - 負(fù)載:
36V(最大)
- 電壓 - 供電 (Vcc/Vdd):
不需要
- 電流 - 輸出(最大值):
1.7A
- 導(dǎo)通電阻(典型值):
250 毫歐(最大)
- 輸入類型:
非反相
- 故障保護(hù):
限流(固定),超溫,過壓
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 供應(yīng)商器件封裝:
8-SOIC
- 封裝/外殼:
8-SOIC(0.154",3.90mm 寬)
- 描述:
IC PWR DRIVER N-CHANNEL 1
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
STM |
24+ |
120 |
詢價(jià) | ||||
ST |
2016+ |
SOP8 |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
ST |
2016+ |
SOP8 |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
ST |
22+23+ |
SOP8 |
53193 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST |
19+ |
SOP8 |
8650 |
原裝正品,現(xiàn)貨熱賣 |
詢價(jià) | ||
STMicroelectronics |
23+ |
8-SO |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) | ||
ST |
07+ |
SOP8 |
354 |
剛到現(xiàn)貨加微13425146986 |
詢價(jià) | ||
ST |
2020 |
SOP8 |
3300 |
絕對(duì)全新原裝現(xiàn)貨,歡迎來電查詢 |
詢價(jià) | ||
ST |
21+ |
SOP8 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
2022+ |
750 |
全新原裝 貨期兩周 |
詢價(jià) |
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