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100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BR100N10

N-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BRB100N10

N-CHANNELMOSFETinaTO-263PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BSC100N10NSFG

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEB100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FDP100N10

N-ChannelPowerTrench?MOSFET

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP100N10

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220packaging ?Lowswitchingloss ?Ultralowgatecharge ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications ?AC-DCconverters ?LEDlighting ?Unin

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FIR100N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTD100N10A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

IXFK100N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK100N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFN100N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

LMPC100N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTY100N10E

TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM

TMOSE-FET?PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY100N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTY100N10E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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VANGUARD/威兆
20+
PDFN5x6
120000
原裝正品 可含稅交易
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VANGUARD/威兆
PDFN5x6
90000
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VANGUARD/威兆
23+
PDFN5x6
360000
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VISHAY
1809+
SMD
96
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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Vishay Semiconductor Diodes Di
2022+
8-PACE-PAK
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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VishaySemiconductorDiode
23+
SCRHY-BRIDGE400V25APACE-
1690
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24+
N/A
76000
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VISHAY
10+/11+
PACE-PAK
1280
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VISHAY/威世
2020+
NA
80000
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VISHAY/威世
2021+
NA
100500
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更多VSP100N10MD供應(yīng)商 更新時(shí)間2025-1-17 14:00:00

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