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H05N60

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60E

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60F

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

MCU05N60

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MCU05N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MCU05N60A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtecti

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtection

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MMG05N60D

InsulatedGateBipolarTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MMG05N60D

POWERLUXIGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應商型號品牌批號封裝庫存備注價格
HF
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
HF
25+23+
TO252
75464
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
C
SOT-252
22+
6000
十年配單,只做原裝
 詢價
C
23+
SOT-252
6000
原裝正品，支持實單
 詢價
CET
TO-220F
50000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
C
23+
SOT-252
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
24+
8866
詢價
TOSHIBA
24+/25+
1017
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
TOSHIBA
24+
NA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
只做原裝
24+
36520
一級代理/放心采購
 詢價
更多05N60供應商 更新時間2025-4-9 16:21:00

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