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11N06

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LT

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LTA

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD11N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD11N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
PHILIPS
2023+環(huán)?，F(xiàn)貨
TO-263
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
PHILIPS/飛利浦
23+
TO-263
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
PHILIPS/飛利浦
23+
TO-263
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
NXP/恩智浦
23+
TO-263
5258
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
infineon
2020+
P-TO252
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
INFINEON
23+
TO251
7000
詢價
UTC
20232024
TO220F
6000
老牌代理,長期現(xiàn)貨
 詢價
GF
TO-252
32000
原裝正品優(yōu)價
 詢價
GOFORD
2022+
TO-251252
50000
原廠代理 終端免費提供樣品
 詢價
更多11N06供應(yīng)商 更新時間2024-10-25 11:03:00

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