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21N60

Fast Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HMS21N60

N-ChannelSuperJunctionPowerMOSFETII

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS21N60F

N-ChannelSuperJunctionPowerMOSFETII

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRFP21N60L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L

SMPSMOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFP21N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.32?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP21N60LPBF

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60LPBF

SMPSMOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFR21N60L

SMPSMOSFET

IRF

International Rectifier

IXFH21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFZ21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

MGP21N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP21N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

Motorola

Motorola, Inc

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

Motorola

Motorola, Inc

MGW21N60ED

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA21N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHA21N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
富士通
2020+
TO-3P
9500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
FUJITSU/富士通
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FUJI
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
富土
TO-3P
608900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ELMA
23+
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
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FUJI
22+
TO-3P
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
FUJI
07+
TO-3P
280
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
FUJITSU/富士通
23+
NA/
4093
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
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FUJITSU/富士通
24+
TO-3P
860000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FUJI
23+
TO-3P
10000
原裝正品現(xiàn)貨
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更多21N60供應(yīng)商 更新時(shí)間2024-11-12 15:47:00

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