首頁 >2N7002/HAMR>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
NCHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontroolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
FIELDEFFECTTRANSISTOR | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Cha | DIODES Diodes Incorporated | DIODES | ||
NCHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementMOSFET HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1110D-3 (SOT8015)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?ExtendedtemperaturerangeTj=175 | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1412-6 (SOT1268)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?Trench | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features ?N-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtectedupto1kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101Stand | DIODES Diodes Incorporated | DIODES | ||
N-CHannelEnhancementModeMOSFET | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
60V,350mAN-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotecti | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
60VN-ChannelEnhancementModeMOSFET Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,350mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
60VN-ChannelMosfet Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays | TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司 | TECHPUBLIC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Nexperia USA Inc. |
24+ |
TO-236AB |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
Nexperia/安世 |
2024 |
SOT-23 |
14025 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
Nexperia(安世) |
2112+ |
SOT23 |
115000 |
3000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價(jià) | ||
NEXPERIA |
22+ |
SMD |
171000 |
詢價(jià) | |||
NEXPERIA/安世 |
22+ |
SOT-23 |
69000 |
原裝正品 |
詢價(jià) | ||
Nexperia安世 |
24+ |
SOT-23 |
10000 |
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
NEXPERIA/安世 |
19+ |
SOT-23 |
45000 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
Nexperia(安世) |
23+ |
SOT23(TO236) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
Nexperia |
ROHS/NEW. |
原封ORIGIANL |
30050 |
原裝,元器件供應(yīng)/半導(dǎo)體 |
詢價(jià) | ||
NEXPERIA/安世 |
24+ |
SOT-23 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價(jià) |
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