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2N7002DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODES

Diodes Incorporated

2N7002DWKX

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?SmallSurfaceMountPackage ?ESDProtectedupto2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(No

DIODES

Diodes Incorporated

2N7002DWL

DualN-ChannelMOSFET

Features ?HighDensityCellDesignForLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002DWQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

2N7002DWS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODES

Diodes Incorporated

2N7002DW-TP

N-ChannelMOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Ruggedandreliable ?Voltagecontrolledsmallsignalswitch ?OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODES

Diodes Incorporated

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002E

SmallSignalMOSFET60V,310mA,Single,N??hannel,SOT??3

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

2N7002E

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

2N7002E

N-CHANNELENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ?LowOn-Resistance ?FastSwitchingSpeed ?Low-voltagedrive ?Easilydesigneddrivecircuits ?Pb-FreePackageisavailable. ?Canprotectagainststaticelectricity1KVwhen theproductisinuse. ?AEC-Q101Pass

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

2N7002E

N-Channel60V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002E

SmallSignalMOSFETSingleN??hannel,60V,310mA,2.5Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002EPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability.

CHENMKOchenmko

力勤股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
PHILIPS/飛利浦
23+
SOT23-6
6500
專注配單,只做原裝進口現(xiàn)貨
詢價
PHILIPS/飛利浦
23+
SOT23-6
6500
專注配單,只做原裝進口現(xiàn)貨
詢價
DIODES
2016+
SOT36
6526
只做原裝正品!假一賠十!只要有上一定有貨的!
詢價
DIODES
13+
6181
原裝分銷
詢價
DIODES/美臺
23+
SOT36
90000
一定原裝房間現(xiàn)貨
詢價
DIODES
08+
SOT36
20
普通
詢價
DIODES/美臺
23+
SOT36
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
DIODES/美臺
23+
NA/
3270
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
DiodesInc
23+
SOT-363
7750
全新原裝優(yōu)勢
詢價
N
23+
SOP-6
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
更多2N7002DWF供應(yīng)商 更新時間2025-1-19 15:00:00