零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT500mAmpere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapabilit | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT0.300Ampere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput MARKING *PK1 FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturation | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
TrenchMOSLogicLevelFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High- | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
MOSFET MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
MOSFET | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-CHANNELENHANCEMENTMODEMOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Channel | DIODES Diodes Incorporated | DIODES | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?AEC-Q101quali | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
MOSFET Features -Powerdissipation:0.35W | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
60V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree. FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●ESDProtected:1000V | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
N-Channel60-V(D-S)MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe?55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed | DIODES Diodes Incorporated | DIODES |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
YEASHIN |
2019+ |
SOT363 |
36000 |
原盒原包裝 可BOM配套 |
詢價 | ||
強茂 |
2024 |
SOT23 |
58209 |
16余年資質 絕對原盒原盤代理渠道 更多數(shù)量 |
詢價 | ||
Yeashin |
23+ |
SC70-6 |
12000 |
全新原裝優(yōu)勢 |
詢價 | ||
原裝PANJIT |
24+ |
SOT-363 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
YEASHIN |
23+ |
NA |
72486 |
專做原裝正品,假一罰百! |
詢價 | ||
YEASHIN |
22+23+ |
SOT363 |
37430 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
PANJIT |
1815+ |
SOT363 |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
YEASHIN |
21+ |
SOT363 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
Yeashin |
23+ |
SC70-6 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
Yeashin |
19+ |
SC70-6 |
20000 |
6000 |
詢價 |
相關規(guī)格書
更多- 2N7002LT1
- 2N7002-T1
- 2P102
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