零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TrenchMOSLogicLevelFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High- | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
MOSFET MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
MOSFET | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
N-CHANNELENHANCEMENTMODEMOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Channel | DIODES Diodes Incorporated | DIODES | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?AEC-Q101quali | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
MOSFET Features -Powerdissipation:0.35W | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
60V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree. FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●ESDProtected:1000V | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
N-Channel60-V(D-S)MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe?55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed | DIODES Diodes Incorporated | DIODES | ||
NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DirectLogic-LevelInterface:TTL/CMOS GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
N-ChannelMOSFET Features ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?ESDProtectedupto2KV(HBM) ?Marking:72K ?Halogenfreeavailableuponrequestbyaddingsuff | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ANBON/臺(tái)灣安邦 |
23+ |
SOT-723 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低 |
詢價(jià) | ||
安邦 |
21+ |
SOT-723 |
30 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | ||
24+ |
N/A |
70000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VBSEMI |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
Technoiogy |
1948+ |
SOT23-3 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
Technoiog |
20+ |
SOT-323 |
32970 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
ANBON臺(tái)灣安邦 |
2021+ |
SOT-323 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
YEASHIN |
21+ |
SOT323 |
141000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
TECHNOIOGY |
23+ |
SOT23-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TECHNOIOGY |
2022 |
SOT23-3 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) |
相關(guān)規(guī)格書
更多- 2N7002LT1
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