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首頁 >2N7002KA-RTK/H>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | KEC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr | WEITRON Weitron Technology | WEITRON | ||
DualN-ChannelSmallSignalMOSFET FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
60VESDProtectedN-ChannelEnhancementModeMOSFET RDS(ON),VGS@10V,IDS@500mA=2? RDS(ON),VGS@4.5V,IDS@200mA=3? FEATURES ?AdvancedTrenchProcessTechnology ?UltraLowOnResistance:2? ?FastSwitchingSpeed:20ns ?LowInputandOutputLeakageCurrent ?2KVESDProtection ?SpeciallyDesignedforHighSpeedCircuit,BatteryOperate | HY HY ELECTRONIC CORP. | HY | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
N-channelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
DualN-ChannelSmallSignalMOSFET | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
Plastic-EncapsulateMOSFET Features ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected ?LoadSwitchforPortableDevices. ?DC/DCConverter. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
KEC ELECTRONICS CO.,LTD |
23+ |
SMD |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
KEC |
22+ |
SOT23-3 |
9850 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
KEC |
20+ |
SOT23-3 |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
KEC |
21+ |
SOT23 |
3000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
KEC |
21+ |
SOT23 |
120000 |
長期代理優(yōu)勢供應(yīng) |
詢價 | ||
KEC |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
KEC |
2022 |
SOT23 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
KEC |
21+ |
SOT233 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
KEC |
SOT23 |
608900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
KEC |
23+ |
SOT-23 |
174809 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 |
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