首頁 >2N7002KBDW>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description Itutilizesthelatest | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowonresistanceRDS(ON)?Lowgatethresholdvoltage?Lowinputcapacitance?ESDprotectedupto2KV?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | KEC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr | WEITRON Weitron Technology | WEITRON | ||
DualN-ChannelSmallSignalMOSFET FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司 | YANGJIE | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Siliup(矽普) |
23+ |
SOT-363 |
6000 |
三極管/MOS管/晶體管 > 場效應(yīng)管(MOSFET) |
詢價(jià) | ||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VBSEMI |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
VBSEMI/臺灣微碧 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
YJ |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
YJ |
22+ |
SOT23 |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | ||
YJ |
21+ |
SOT23 |
18000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
N/A |
23+ |
80000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | |||
YJ |
24+ |
SOT23 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價(jià) | ||
YANGJIE |
8 |
詢價(jià) |
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