零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | KEC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr | WEITRON Weitron Technology | WEITRON | ||
DualN-ChannelSmallSignalMOSFET FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
60VESDProtectedN-ChannelEnhancementModeMOSFET RDS(ON),VGS@10V,IDS@500mA=2? RDS(ON),VGS@4.5V,IDS@200mA=3? FEATURES ?AdvancedTrenchProcessTechnology ?UltraLowOnResistance:2? ?FastSwitchingSpeed:20ns ?LowInputandOutputLeakageCurrent ?2KVESDProtection ?SpeciallyDesignedforHighSpeedCircuit,BatteryOperate | HY HY ELECTRONIC CORP. | HY | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
N-channelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
DualN-ChannelSmallSignalMOSFET | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
Plastic-EncapsulateMOSFET Features ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected ?LoadSwitchforPortableDevices. ?DC/DCConverter. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET–ESDProtected Features ?RDS(ON),VGS@10V,ID@500mA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
Plastic-EncapsulateMOSFETS FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
MOSFET | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?High-speedlinedriver. ?Low-sideloadswitch. | KECKEC CORPORATION KEC株式會社 | KEC | ||
N-ChSmallSignalMOSFETwithGateProtection FEATURES z2kVESDProtection zLowerOn-resistance:2Ω zLowThreshold:2V(Typ.) zLowInputCapacitance:25pF zFastSwitchingPerformance:25nS zLowInputandOutputLeakage APPLICATIONS zDirectLogic-LevelInterface:TTL/CMOS zDrivers:Relays,Solenoi | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
MOSFET RoHSDevice N-Channel HalogenFree Features -SmallSignalMOSFET. -ESDprotected:1000V. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SmallSignalMOSFET380mAmps,60VoltsN??hannelSOT-23 | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Fairchild |
23+ |
SOT-23 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
YANGJIE(揚杰) |
23+ |
SOT323 |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
YANGJIE |
20 |
詢價 | |||||
24+ |
N/A |
73000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
YANGJIE |
24+ |
con |
20 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index |
詢價 | ||
YANGJIE |
24+ |
con |
20 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index |
詢價 | ||
揚杰科技 |
21+ |
SOT-323 |
3000 |
全新原裝鄙視假貨15118075546 |
詢價 | ||
YANGJIE |
24+ |
SOT-323 |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購 |
詢價 | ||
FUXINSEMI(富芯微) |
2112+ |
SOT-363 |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
KEC |
23+ |
US6 |
675232 |
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 |
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