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2SD2114

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SD2114

TRANSISTOR(NPN)

FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SD2114

NPNPlastic-EncapsulateTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114

NPNPlasticEncapsulatedTransistor

FEATURE ?HighDCCurrentGain. ?HighEmitter-BaseVoltage.VEBO=12V(Min.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

PowerTransistor

Features HighDCcurrentgain. Highemitter-basevoltage. LowVCE(sat).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KS

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KU

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KV

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KW

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ROHM/羅姆
23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ROHM/羅姆
2022
SOT-323
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ROHM/羅姆
23+
NA
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
ROHM/羅姆
2021+
SMT3HP
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
Rohm(羅姆)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
ROHM/羅姆
23+
SMT3HP
5177
深圳現(xiàn)貨
 詢價(jià)
ROHM/羅姆
24+
NA
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
ROHM/羅姆
22+
SOT-23
35975
原裝正品現(xiàn)貨
 詢價(jià)
原裝ROHM
19+
SOT-23
20000
詢價(jià)
ROHM/羅姆
1942+
SOT-23
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價(jià)
更多2SD2114KIC供應(yīng)商 更新時(shí)間2024-12-27 11:00:00

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