首頁 >71T75802S166BG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
71T75802S166BG | 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
71T75802S166BG | 2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | |
71T75802S166BG | 包裝:托盤 封裝/外殼:119-BGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:托盤 封裝/外殼:119-BGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝:托盤 封裝/外殼:119-BGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
產(chǎn)品屬性
- 產(chǎn)品編號:
71T75802S166BG
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR(ZBT)
- 存儲容量:
18Mb(1M x 18)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
2.375V ~ 2.625V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
119-BGA
- 供應(yīng)商器件封裝:
119-PBGA(14x22)
- 描述:
IC SRAM 18MBIT PARALLEL 119PBGA
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞薩)/IDT |
2022+原裝正品 |
PBGA-119(14x22) |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
90-TFBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
RENESAS(瑞薩)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
IDT |
20+ |
BGA-119 |
84 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Renesas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
RENESAS(瑞薩)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
詢價 | |||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 |
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