首頁 >71T75802S166PFGI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
71T75802S166PFGI | 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
71T75802S166PFGI | 2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | |
71T75802S166PFGI | 包裝:散裝 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:散裝 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
71T75802S166PFGI
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
散裝
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR(ZBT)
- 存儲容量:
18Mb(1M x 18)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
2.375V ~ 2.625V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應商器件封裝:
100-TQFP(14x14)
- 描述:
IC SRAM 18MBIT PARALLEL 100TQFP
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞薩)/IDT |
2022+原裝正品 |
TQFP-100(14x14) |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價 | ||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
RENESAS(瑞薩)/IDT |
2117+ |
TQFP-100(14x14) |
315000 |
72個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
IDT |
20+ |
QFP-100 |
72 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Renesas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Renesas Electronics Corporatio |
23+/24+ |
100-LQFP |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
Renesas Electronics America In |
24+ |
100-LQFP |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 |
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