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AIHD03N60RF

Marking:AH03DRF;Package:PG-TO252-3;IGBT with integrated diode in packages offering space saving advantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CJP03N60

PowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

FMC03N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMC03N60E

N-CHANNELSILICONPOWERMOSFETFeatures

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMI03N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMP03N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMP03N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV03N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

H03N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
詢價(jià)
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
Infineon
23+
Tray
500
原裝正品
詢價(jià)
Infineon Technologies
21+
PG-TO252-3-313
2500
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)!
詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
INFINEON
1809+
TO252-3
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Infineon Technologies
22+
TO2523
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Infineon Technologies
21+
TO2523
13880
公司只售原裝,支持實(shí)單
詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
詢價(jià)
更多AIHD03N60RF供應(yīng)商 更新時(shí)間2025-2-17 13:04:00