首頁 >AIHD03N60RF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AIHD03N60RF | IGBT with integrated diode in packages offering space saving advantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
PowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFETFeatures | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptimizedEon,EoffandQrrforlowswitchinglosses | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
標準封裝 |
5000 |
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保 |
詢價 | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
Infineon |
23+ |
Tray |
500 |
原裝正品 |
詢價 | ||
Infineon Technologies |
21+ |
PG-TO252-3-313 |
2500 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON |
1809+ |
TO252-3 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Infineon Technologies |
22+ |
TO2523 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
TO2523 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 |
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