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AQV410EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW410EHA

PhotoMOSRelayDimensions

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etc未分類制造商etc2未分類制造商

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AQV410EAZ

  • 制造商：

    Panasonic Electric Works

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NAIS
2011+
DIPSOP6
20000
原裝現(xiàn)貨
 詢價(jià)
NAIS
23+
SOP6
14330
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
松下panasonic
24+
全新原裝
6180
詢價(jià)
NAIS
06+
DIP6
2000
詢價(jià)
PANASONIC
22+
原廠原封
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
panasoni
專業(yè)光耦
DIPSOP6
65800
光耦原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
Panasonic
2022+
1
全新原裝 貨期兩周
 詢價(jià)
NAIS松下
24+
DIP-6
100000
原裝正品現(xiàn)貨
 詢價(jià)
PANASONIC(松下)
2032+
DIP-6
2579
向鴻優(yōu)勢(shì)庫(kù)存,貨在倉(cāng)庫(kù)要貨請(qǐng)確認(rèn)
 詢價(jià)
Panasonic
2010+
N/A
66
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 詢價(jià)
更多AQV410EAZ供應(yīng)商 更新時(shí)間2020-4-2 17:49:00

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