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首頁 >ASDM30N120KQ>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FGA30N120FTD	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGA30N120FTDTU	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH30N120FTD	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH30N120FTDTU	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGW30N120H	文件：559.44 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFuji Electric 富士電機富士電機株式會社	Fuji
FGW30N120HD	文件：651.14 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFuji Electric 富士電機富士電機株式會社	Fuji
G30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
GW30N120KD	文件：359.23 Kbytes Page：13 Pages	30A-1200V-shortcircuitruggedIGBT	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
GWA30N120KD	文件：423.46 Kbytes Page：15 Pages	30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
HGTG30N120CN	文件：81.32 Kbytes Page：7 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	Intersil Intersil Corporation	Intersil
HGTG30N120CN	文件：40.5 Kbytes Page：5 Pages	30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie	Intersil Intersil Corporation	Intersil
HGTG30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HIH30N120TF	文件：892.05 Kbytes Page：8 Pages	1200VFieldStopTrenchIGBT	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
IHW30N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IHW30N120R	文件：977.75 Kbytes Page：12 Pages	IGBTwithmonolithicbodydiodeforsoftswitchingApplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IXDH30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Corporation	IXYS
IXDH30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Corporation	IXYS
IXDR30N120	文件：69.09 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -	IXYS IXYS Corporation	IXYS
IXDT30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Corporation	IXYS
IXDT30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市芯澤盛世科技有限公司	ASDM30N120KQ	ASCEND/安森德	24+	N/A	10000	原廠一級代理	詢價
現(xiàn)代芯城（深圳）科技有限公司	ASDM30N120KQ-R		24+	N/A	48000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
北京三盛恒業(yè)電子有限公司	ASDM30N55E-R	ASCEND	21+	N/A	2500	進口原裝,優(yōu)勢現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	ASDM30N55E-R	ASCEND			10		詢價
深圳市芯祺盛科技有限公司	ASDM30N55E-R	PANASONIC	24+	SMD	10	C24-電感器	詢價
北京京北通宇電子元件有限公司	ASDM30N55E-R	ASCEND	24+	con	10	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index	詢價
深圳市德力誠信科技有限公司	ASDM30N55E-R	ASCEND	24+	con	10	優(yōu)勢庫存,原裝正品	詢價
深圳市眾芯源半導(dǎo)體有限公司	ASDM30N90KQ	ASCEND安森德	22+	TO-252	10000	原裝正品,渠道現(xiàn)貨	詢價
深圳市宇集芯電子有限公司	ASDM30N90KQ	ASCEND安森德	24+	TO-252	10000	一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理	詢價
深圳市云美電子科技有限公司	ASDM30P11TD	ASCEND	22+	DFN3*3	34000	只做原裝進口現(xiàn)貨	詢價

更多ASDM30N120KQ供應(yīng)商更新時間2025-1-9 10:00:00

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