首頁 >BC650(D,E)>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A | TRSYS Transys Electronics | TRSYS | ||
PNPSILICONDARLINGTONTRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENSSiemens Ltd 西門子德國西門子股份公司 | SIEMENS | ||
NPNSILICONDARLINGTONTRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENSSiemens Ltd 西門子德國西門子股份公司 | SIEMENS | ||
PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | POINN Power Innovations Ltd | POINN | ||
SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647 | COMSET Comset Semiconductor | COMSET | ||
PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯伯恩斯(邦士) | Bourns | ||
iscSiliconPNPDarlingtonPowerTransistor SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain:hFE=750(Min)@IC=-3A ·LowSaturationVoltage ·ComplementtoTypeBD649 APPLICATIONS ·DesignedforuseascomplementaryAFpush-pull | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SILICONDARLINGTONPOWERTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPNPDarlingtonPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
iscSiliconPNPDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNSiliconGermaniumRFTransistor ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighLinearityLowNoiseSiGe:CNPNRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighLinearitySiliconGermaniumBipolarRFTransistor ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
通用型 (Uni)
- 封裝形式:
直插封裝
- 極限工作電壓:
30V
- 最大電流允許值:
0.1A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BC522,BC549,
- 最大耗散功率:
0.625W
- 放大倍數(shù):
β=2500
- 圖片代號:
A-23
- vtest:
30
- htest:
999900
- atest:
0.1
- wtest:
0.625
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
JXK/杰信科 |
23+ |
TO-92 |
999999 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
QUECTEL/移遠(yuǎn) |
2004 |
LCC |
1880 |
全新、原裝 |
詢價 | ||
Quectel |
23+ |
58-SMD |
6888 |
確保原裝正品,專注終端客戶一站式BOM配單 |
詢價 | ||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
QUECTEL/移遠(yuǎn)通信 |
23+ |
/ |
2000 |
原裝正品 |
詢價 | ||
Quectel(移遠(yuǎn)) |
22+ |
SMD-58P |
1500 |
百分百原裝現(xiàn)貨 |
詢價 | ||
HOLTEK/合泰 |
23+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
HOLTEK/合泰 |
23+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
HOLTEK |
2018+ |
SOPDIP |
40007 |
進(jìn)口臺灣原裝合泰可追溯原廠技術(shù)支持燒錄開發(fā) |
詢價 | ||
HOLTEK/合泰 |
2020+ |
SOPDIP |
600057 |
原裝現(xiàn)貨,假一賠十 |
詢價 |
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