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BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD650

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BD650

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD650

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

BD650

iscSiliconPNPDarlingtonPowerTransistor

SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain:hFE=750(Min)@IC=-3A ·LowSaturationVoltage ·ComplementtoTypeBD649 APPLICATIONS ·DesignedforuseascomplementaryAFpush-pull

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD650

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD650

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD650

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD650

SiliconPNPDarlingtonPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD650CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BD650CS

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BD650CT

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650F

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFP650

NPNSiliconGermaniumRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearityLowNoiseSiGe:CNPNRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearitySiliconGermaniumBipolarRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

晶體管資料

  • 型號：

    BC650(D,E)

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    通用型 （Uni）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    30V

  • 最大電流允許值：

    0.1A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BC522,BC549,

  • 最大耗散功率：

    0.625W

  • 放大倍數(shù)：

    β=2500

  • 圖片代號：

    A-23

  • vtest：

    30

  • htest：

    999900

  • atest：

    0.1

  • wtest：

    0.625

供應(yīng)商型號品牌批號封裝庫存備注價格
JXK/杰信科
23+
TO-92
999999
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
QUECTEL/移遠(yuǎn)
2004
LCC
1880
全新、原裝
 詢價
Quectel
23+
58-SMD
6888
確保原裝正品,專注終端客戶一站式BOM配單
 詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
QUECTEL/移遠(yuǎn)通信
23+
/
2000
原裝正品
 詢價
Quectel(移遠(yuǎn))
22+
SMD-58P
1500
百分百原裝現(xiàn)貨
 詢價
HOLTEK/合泰
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HOLTEK/合泰
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HOLTEK
2018+
SOPDIP
40007
進(jìn)口臺灣原裝合泰可追溯原廠技術(shù)支持燒錄開發(fā)
 詢價
HOLTEK/合泰
2020+
SOPDIP
600057
原裝現(xiàn)貨,假一賠十
 詢價
更多BC650(D,E)供應(yīng)商 更新時間2024-10-24 9:30:00

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