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BD140

PlasticMediumPowerSiliconPNPTransistor

1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc ?BD136,138,140arecomplementarywithBD135,137,139

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BD140

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES ?Highcurrent(max.1.5A) ?Lowvoltage(max.80V). APPLICATIONS ?Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD140

PNPSILICONTRANSISTORS

POWERTRANSISTORSPNPSILICON

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD140

MediumPowerLinearandSwitchingApplications

Features ?ComplementtoBD135,BD137andBD139respectively Applications ?MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD140

PNPSILICONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD140

PNPPLASTICPOWERTRANSISTORS

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BD140

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BD140

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD140

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

SAVANTIC

Savantic, Inc.

BD140

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES ?HighCurrent.(Max.:-1.5A) ?DCCurrentGain:hFE=40Min.@IC=-0.15A ?ComplementarytoBD139.

KECKEC CORPORATION

KEC株式會社

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更多BCS-140-L-D-PE供應(yīng)商 更新時間2025-3-10 14:16:00