首頁 >BCT3258EGE-TR>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,6.9A,RDS(ON)=28mW@VGS=10V. RDS(ON)=34mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=45mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT7Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE(LEADFREE) | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會社 | MITSUMI | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會社 | MITSUMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BROADCHIP |
23+ |
QFN |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
BROADCHIP |
19+ |
QFN |
20000 |
3155 |
詢價 | ||
BROADCHIP |
24+ |
QFN |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價 | ||
BROADCH |
2020+ |
QFN |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
只做原裝 |
24+ |
QFN |
36520 |
一級代理/放心采購 |
詢價 | ||
BROADCHIP |
24+ |
QFN |
3000 |
保證原裝正品現(xiàn)貨庫存部分HK現(xiàn)貨 |
詢價 | ||
BROADCHIP |
23+ |
QFN24 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
BROADCHIP |
24+ |
QFN |
18560 |
假一賠十全新原裝現(xiàn)貨特價供應(yīng)工廠客戶可放款 |
詢價 | ||
BROADCHIP |
12+ |
QFN24 |
36000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
BROADSHIP |
23+ |
NA/ |
1400 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 |
