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BD116

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BTS116

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BUL116

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULD116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BYV116

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV116B

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CDST116-G

SMDSwitchingDiode

Features -Lowleakagecurrentapplications. -Mediumspeedswitchingtimes.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDST116-G

SMDSwitchingDiode

COMCHIPComchip Technology

典琦典琦科技股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEXPERIA/安世
23+
AN
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
NEXPERIA/安世
23+
AN
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
更多BCV116C供應(yīng)商 更新時(shí)間2025-1-20 15:56:00