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BFG505-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFM505

DualNPNwidebandtransistor

DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFM505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFR505

NPN9GHzwidebandtransistor

DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFR505T

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES ?Lowcurrentconsumption ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability ?SOT416(SC-75)package. APPLICATIONS Lowpoweramplifiers,oscillat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR505T

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFS505

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. Itisintendedforlowpoweramplifiers,oscillatorsandmixersparticularlyinRFportablecommunicationequipment(cellularphones,cordlessphones,pagers)upto2GHz. FEATURES ?Lowcurrentconsumption ?Highpowergain ?Lownois

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFS505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFS505

NPN9GHzwidebandtransistor

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

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PHILIPS/飛利浦
23+
SOT-143
15000
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SOT-143
23+
NA
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NEXPERIA
23+
SOT-143
63000
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NXP
2023+
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143
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2022
143
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PHILIPS/飛利浦
22+
SOT-143
72500
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更多BFG505-X供應(yīng)商 更新時(shí)間2025-3-13 9:30:00

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